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| LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA12B/3I7G DATA SHEET DOC. NO : REV. DATE : : QW0905-LA12B/3I7G B 11 - Jan - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA12B/3I7G Page 1/5 Package Dimensions I I I G G G G G G G 70.70.5 6.1 5.2 1.3 3.75 7.0X9=63.0 6.0 8.5 1/4 0.5 TYP -+ 13.5MIN 1.0MIN 2.3TYP LI5620 LG5620 6.2 1.4 3.0 6.0 8.0 1.5MAX 12.5MIN 1/4 0.5 TYP 2.3TYP 1.0MIN Note : 1.All dimension are in millimeter tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA12B/3I7G Page 2/5 Absolute Maximum Ratings at Ta=25 J Ratings Parameter Symbol I Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Operating Temperature Storage Temperature Soldering Temperature IF IFP PD Ir Topr Tstg Tsol 30 120 100 10 -40 ~ +85 -40 ~ +100 Max 260J for 5 sec Max (2mm from body) G 30 120 100 mA mA mW UNIT g A J J Typical Electrical & Optical Characteristics (Ta=25 J ) PART NO MATERIAL Emitted COLOR Forward Peak Spectral voltage wave halfwidth length f nm @ 20mA(V) f Pnm Luminous intensity @10mA(mcd) Viewing angle 2c 1/2 (deg) Lens 635 565 45 30 Min. Max. Min. 1.7 1.7 2.6 2.6 0.8 0.8 Typ. 1.8 1.8 142 142 GaAsP/GaP Orange Red Diffused LA12B/3I7G GaP Green Green Diffused Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The luminous intensity data did not including O 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA12B/3I7G Page 3/5 Typical Electro-Optical Characteristics Curve E CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 1000 Forward Current(mA) 100 Relative Intensity Normalize @20mA 2.0 3.0 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 10 1.0 0.1 1.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Relative Intensity@20mA Normalize @25J Forward Voltage@20mA Normalize @25J 1.2 Ambient Temperature(J ) Ambient Temperature(J ) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 550 600 650 700 750 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA12B/3I7G Page 4/5 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 1000 Forward Current(mA) 100 Relative Intensity Normalize @20mA 1.0 2.0 3.0 4.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 10 1.0 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Relative Intensity@20mA Normalize @25J Forward Voltage@20mA Normalize @25J 1.2 Ambient Temperature(J ) Ambient Temperature(J ) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA12B/3I7G Page 5/5 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 JO 5J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 JO 5J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 JO 5J 2.RH=90 %~95% 3.t=240hrs O 2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 JO 5J &-40JO (10min) (10min) 2.total 10 cycles 5J The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 JO 5J 2.Dwell time= 10 O 1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 JO 5J 2.Dwell time=5 O 1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 |
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